电子电路大全(PDF格式)-第109章
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＋Keta= …1。4800000E…02 A1= 0。00 A2= 0。4000000 Ags= 2。0000000E…02
＋B0= 3。1600001E…07 B1= …3。0300001E…07
* SUBTHRESHOLD CURRENT PARAMETERS
＋Voff= …0。1054000 NFactor= 0。8294000 Cit= 9。8500000E…04
＋Cdsc= 1。0000000E…10 Cdscb= 0。00 Cdscd= 0。00 Eta0= 0。1185000
＋Etab= …3。2900000E…03 Dsub= 0。5157000
* ROUT PARAMETERS
＋Pclm= 2。9535999 Pdiblc1= 1。0000000E…05 Pdiblc2= 1。2900000E…03
＋Pdiblcb= 0。1900000 Drout= 3。0000000 Pscbe1= 3。7000000E＋08
＋Pscbe2= 1。0000000E…10 Pvag= 1。0000000 Delta= 1。0000000E…02
＋Alpha0= 0。00 Beta0= 30。0000000
* TEMPERATURE EFFECTS PARAMETERS
＋kt1= …0。4763000 kt2= …2。9050000E…02 At= 1。0000000E＋04 Ute= …1。0000000
＋Ua1= 3。7500000E…09 Ub1= …7。1500000E…18 Uc1= …5。0833000E…11
＋Kt1l= 0。00 Prt= …8。8300000E＋02
* CAPACITANCE PARAMETERS
＋Cj= 8。208121E…04 Mj= 。5198076 Pb= 。9180865 Cjsw= 4。107676E…10
＋Mjsw= 。2586436 Php= 。6054589 Cta= 0 Ctp= 0 Pta= 0 Ptp= 0 JS=1。00E…04
＋JSW=0。00 N=1。0 Xti=3。0 Cgdo=1。0E…10 Cgso=1。0E…10 Cgbo=1。0E…13
＋Capmod= 2 NQSMOD= 0 Elm= 5 Xpart= 0 cgsl= 1。0000000E…10
＋cgdl= 9。9592000E…11 ckappa= 1。0000000 cf= 0。00 clc= 5。0018750E…08
＋cle= 0。8024064 Dlc= …1。421085E…14 Dwc= 2。304E…07）
******************************************************
********* subcircuit ******************************
*****************************************************
。SUBCKT CMOSN D G S B PARAMS： L=0。6U W=0。8U
MN1 D G S B CMOSN L=L W=W AD='W*1。8*1e…6' AS='W*1。8*1e…6'
PS='（W＋1。8*1e…6）*2' PD='（W＋1。8*1e…6）*2'
。ENDS
*
。SUBCKT CMOSP D G S B PARAMS： L=0。6U W=0。8U
MP1 D G S B CMOSP L=L W=W AD='W*1。8*1e…6' AS='W*1。8*1e…6'
PS='（W＋1。8*1e…6）*2' PD='（W＋1。8*1e…6）*2'
。ends
****************************************************
****************************************************
。Endl TT
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MOSIS 0。25um
MOSIS Parametric Test Results
http：//mosis。org/
RUN： T02D VENDOR： TSMC
TECHNOLOGY： SCN025 FEATURE SIZE： 0。25 microns
INTRODUCTION： This report contains the lot average results obtained by MOSIS from
measurements of MOSIS test structures on each wafer of this fabrication lot。 SPICE
parameters obtained from similar measurements on a selected wafer are also attached。
MENTS： TSMC 0251P5M。
0。25μm BSIM3v3。1 NMOS Parameters
。MODEL CMOSN NMOS （ LEVEL = 49
＋VERSION = 3。1 TNOM = 27 TOX = 5。7E…9
＋XJ = 1E…7 NCH = 2。3549E17 VTH0 = 0。4273342
＋K1 = 0。3922983 K2 = 0。0185825 K3 = 1E…3
＋K3B = 2。0947677 W0 = 2。171779E…7 NLX = 1。919758E…7
＋DVT0W = 0 DVT1W = 0 DVT2W = 0
＋DVT0 = 7。137212E…3 DVT1 = 6。066487E…3 DVT2 = …0。3025397
＋U0 = 403。1776038 UA = …3。60743E…12 UB = 1。323051E…18
＋UC = 2。575123E…11 VSAT = 1。616298E5 A0 = 1。4626549
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＋AGS = 0。3136349 B0 = 3。080869E…8 B1 = …1E…7
＋KETA = 5。462411E…3 A1 = 4。653219E…4 A2 = 0。6191129
＋RDSW = 345。624986 PRWG = 0。3183394 PRWB = …0。1441065
＋WR = 1 WINT = 8。107812E…9 LINT = 3。375523E…9
＋XL = 3E…8 XW = 0 DWG = 6。420502E…10
＋DWB = 1。042094E…8 VOFF = …0。1083577 NFACTOR = 1。1884386
＋CIT = 0 CDSC = 2。4E…4 CDSCD = 0
＋CDSCB = 0 ETA0 = 4。914545E…3 ETAB = 4。215338E…4
＋DSUB = 0。0313287 PCLM = 1。2088426 PDIBLC1 = 0。7240447
＋PDIBLC2 = 5。120303E…3 PDIBLCB = …0。0443076 DROUT = 0。7752992
＋PSCBE1 = 4。451333E8 PSCBE2 = 5E…10 PVAG = 0。2068286
＋DELTA = 0。01 MOBMOD = 1 PRT = 0
＋UTE = …1。5 KT1 = …0。11 KT1L = 0
＋KT2 = 0。022 UA1 = 4。31E…9 UB1 = …7。61E…18
＋UC1 = …5。6E…11 AT = 3。3E4 WL = 0
＋WLN = 1 WW = …1。22182E…16 WWN = 1。2127
＋WWL = 0 LL = 0 LLN = 1
＋LW = 0 LWN = 1 LWL = 0
＋CAPMOD = 2 XPART = 0。4 CGDO = 6。33E…10
＋CGSO = 6。33E…10 CGBO = 1E…11 CJ = 1。766171E…3
＋PB = 0。9577677 MJ = 0。4579102 CJSW = 3。931544E…10
＋PBSW = 0。99 MJSW = 0。2722644 CF = 0
＋PVTH0 = …2。126483E…3 PRDSW = …24。2435379 PK2 = …4。788094E…4
＋WKETA = 1。430792E…3 LKETA = …6。548592E…3 ）
0。25μm BSIM3v3。1 PMOS Parameters
MODEL CMOSP PMOS （ LEVEL = 49
＋VERSION = 3。1 TNOM = 27 TOX = 5。7E…9
＋XJ = 1E…7 NCH = 4。1589E17 VTH0 = …0。6193382
＋K1 = 0。5275326 K2 = 0。0281819 K3 = 0
＋K3B = 11。249555 W0 = 1E…6 NLX = 1E…9
＋DVT0W = 0 DVT1W = 0 DVT2W = 0
＋DVT0 = 3。1920483 DVT1 = 0。4901788 DVT2 = …0。0295257
＋U0 = 185。1288894 UA = 3。40616E…9 UB = 3。640498E…20
＋UC = …6。35238E…11 VSAT = 1。975064E5 A0 = 0。4156696
＋AGS = 0。0702036 B0 = 3。111154E…6 B1 = 5E…6
＋KETA = 0。0253118 A1 = 2。421043E…4 A2 = 0。6754231
＋RDSW = 866。896668 PRWG = 0。0362726 PRWB = …0。293946
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＋WR = 1 WINT = 6。519911E…9 LINT = 2。210804E…8
＋XL = 3E…8 XW = 0 DWG = …2。423118E…8
＋DWB = 3。052612E…8 VOFF = …0。1161062 NFACTOR = 1。2546896
＋CIT = 0 CDSC = 2。4E…4 CDSCD = 0
＋CDSCB = 0 ETA0 = 0。7241245 ETAB = …0。3675267
＋DSUB = 1。1734643 PCLM = 1。0837457 PDIBLC1 = 9。608442E…4
＋PDIBLC2 = 0。0176785 PDIBLCB = …9。605935E…4 DROUT = 0。0735541
＋PSCBE1 = 1。579442E10 PSCBE2 = 6。707105E…9 PVAG = 0。0409261
＋DELTA = 0。01 MOBMOD = 1 PRT = 0
＋UTE = …1。5 KT1 = …0。11 KT1L = 0
＋KT2 = 0。022 UA1 = 4。31E…9 UB1 = …7。61E…18
＋UC1 = …5。6E…11 AT = 3。3E4 WL = 0
＋WLN = 1 WW = 0 WWN = 1
＋WWL = 0 LL = 0 LLN = 1
＋LW = 0 LWN = 1 LWL = 0
＋CAPMOD = 2 XPART = 0。4 CGDO = 5。11E…10
＋CGSO = 5。11E…10 CGBO = 1E…11 CJ = 1。882953E…3
＋PB = 0。99 MJ = 0。4690946 CJSW = 3。018356E…10
＋PBSW = 0。8137064 MJSW = 0。3299497 CF = 0
＋PVTH0 = 5。268963E…3 PRDSW = …2。2622317 PK2 = 3。952008E…3
＋WKETA = …7。69819E…3 LKETA = …0。0119828 ）
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应用电路百例丛书
射频集成电路芯片原理与应用电路设计
黄智伟 编著
Publishing House of Electronics Industry
北京·BEIJING
…………………………………………………………Page 664……………………………………………………………
内 容 简 介
本书分为射频发射器芯片、射频接收器芯片、射频收发器芯片、无线通信射频前端芯片4 个部分，介绍
了最新的射频集成电路芯片的原理、结构、技术特性、应用电路和印制电路板设计。本书注重理论性与实用
性的结合，注重新技术与工程性的结合，深入浅出，通俗易懂。
